PART |
Description |
Maker |
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
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ON Semiconductor Motorola, Inc
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MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB50N06V_D MTB50N06V ON2433 MTB50N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
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MOTOROLA INC Motorola, Inc
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MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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